Impact of Yttrium doping on the physical properties of ErMn2O5

Javed Ahmad; Asia Azhar; Umair Nissar; Syed Hammad Bukhari; Jamshaid  Alam Khan; Hammad Abbas

doi:10.52700/jn.v2i2.44

Impact of Yttrium doping on the physical properties of ErMn2O5

Authors

Javed Ahmad
Asia Azhar
Umair Nissar Department of Physics Bahauddin Zakariya University Multan, Pakistan.
Syed Hammad Bukhari
Jamshaid Alam Khan
Hammad Abbas

DOI:

https://doi.org/10.52700/jn.v2i2.44

Keywords:

X-ray diffraction; Density; Porosity; Electrical resistivity; Variable Range Hopping (VRH)

Abstract

We have investigated the structural and electrical properties of perovskite system Er_1-xY_xMn₂O₅ (x=0, 0.2, 0.4, 0.6, 0.8 and 1.0) synthesized by sol gel method. The structural behavior is probed by the single phase formation of the compositions and orthorhombic symmetry confirmed by X-ray diffraction Rietvield analysis. The electrical behavior of the system is explained in terms of dc temperature dependent electrical resisitivity and Mott variable range hoping (VRH) which supports the semicondicting behavior and P-type polaronic conduction above room temperature.

Published

2021-12-29

How to Cite

Ahmad, J., Azhar, A., Nissar, U., Bukhari, S. H., Alam Khan, J. ., & Abbas, H. (2021). Impact of Yttrium doping on the physical properties of ErMn2O5 . JOURNAL OF NANOSCOPE (JN), 2(2), 191-214. https://doi.org/10.52700/jn.v2i2.44